the s11153-01mt photo ic has a spectral response close to human eye sensitivity. two active areas are made on a single chip. almost only the visible range can be measured by nding the difference between the two output signals in the internal current ampli er circuit. compared to the previous type, the s11153-01mt has a wide operating temperature range (-40 to +105 c). photo ic diode s11153-01mt wide operating temperature: -40 to +105 c www.hamamatsu.com 1 energy-saving sensor for tvs, etc. various types of light level measurement spectral response close to human eye sensitivity lower output-current variation compared with phototransistors excellent linearity suitable for lead-free re ow (rohs compliance) low output deviation by different color temperature light source absolute maximum ratings (ta=25 c) parameter symbol condition value unit reverse voltage v r -0.5 to +12 v photocurrent i l 5m a forward current i f 5m a power dissipation * 1 p 300 mw operating temperature topr no dew condensation * 2 -40 to +105 c storage temperature tstg no dew condensation * 2 -40 to +125 c reflow soldering conditions * 3 tsol peak temperature 250 c max., two times - * 1: power dissipation decreases at a rate of 3.0 mw/c above ta=25 c. *2: when there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. dew condensation on the product may cause deterioration in characteristics and reliability. * 3: jedec level 4 note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. electrical and optical characteristics (ta=25 c) parameter symbol condition min. typ. max. unit spectral response range - 300 to 820 - nm peak sensitivity wavelength p - 560 - nm dark current i d v r =5 v - 1.0 50 na photocurrent i l v r =5 v, 2856 k, 100 lx 325 - 495 a rise time* 4 tr 10 to 90%, v r =7.5 v r l =10 k , =560 nm - 6.0 - ms fall time * 4 tf 90 to 10%, v r =7.5 v r l =10 k , =560 nm - 2.5 - ms automotive illuminance sensor wide operating temperature: -40 to +105 c features applications
photo ic diode s11153-01mt 2 spectral response photocurrent vs. illuminance wavelength (nm) relative sensitivity (%) 0.1 0.2 0.3 0.4 0.5 0.7 0.9 0.6 0.8 1.0 0 200 400 600 800 1000 1200 (typ. ta=25 c, v r =5 v) s11153-01mt human eye sensitivity pulsed light from led (=560 nm) v o load resistance r l 7.5 v 90 % 2.5 v 10 % v o tr tf 0.1 f 1 a 10 a 100 a 1 ma 10 ma 100 na 0.1 1 10 illuminance ( lx) 100 1000 0 1000 photocurrent (typ. ta=25 c, v r =5 v, 2856 k) kpicb0157eb kpicb0158eb * 4: rise/fall time measurement method kpicc0041ea
photo ic diode s11153-01mt 3 rise/fall times vs. load resistance photocurrent vs. ambient temperature 1000 100 10 1 0.1 100 1 k 10 k load resistance () 100 k 1 m rise/fall times (ms) (typ. ta=25 c, v r =7.5 v, =560 nm, vo=2.5 v) tr tf 0.8 1.0 1.2 1.4 0.6 -25 0 25 50 75 100 * normalized photocurrent 1 at ta=25 c ambient temperature (c) photocurrent (relative value) * 90 80 70 60 50 40 30 90 80 70 60 50 40 30 20 10 0 10 20 0 20406080100 20 40 60 80 100 relative sensitivity (%) (typ. ta=25 c, tungsten lamp) x direction y direction x direction y direction kpicb0115ea kpicb0165ea directivity kpicb0159ea
photo ic diode s11153-01mt 4 photodiode for signal offset cathode anode c l r l vout reverse bias power supply the drawing surrounded by the dotted line shows a schematic diagram of the photo ic. current amp (approx. 30000 times) photodiode for signal detection internal protection resistance (approx. 150 ) the photo ic diode must be reverse-biased so that a positive potential is applied to the cathode. to eliminate high-frequency components, we rec- ommend placing a load capacitance c l in parallel with load resistance r l as a low-pass lter. cut-off frequency fc 2 c l r l 1 block diagram kpicc0132ea dimensional outline (unit: mm) photosensitive area 0.32 0.46 3.2 3.5 0.2 4.5 2.6 1.5 recommended land pattern 2.2 0.8 0.8 0.2 0.8 0.2 ?1.0 0.5 1.0 2.7 2.6 0.85 0.8 1.8 0.2 1.5 3.1 ?2.4 silicone resin cathode anode tolerance unless otherwise noted: 0.1 chip position accuracy with respect to package center x, y 0.2 electrode packing: reel (1000 pcs/reel) kpica0087eb
photo ic diode s11153-01mt 5 operating voltage, output characteristics r l (external resistor) i l photo ic diode rin=150 20% (internal protection resistor) vcc kpicc0128ec [figure 1] measurement circuit example 220 lx 450 lx 600 lx 800 lx 1000 lx 1100 lx reverse voltage (v) 012345 (typ. ta=25 c) photocurrent (ma) 5 4 3 2 1 0 saturation region approx. 1260 lx internal protection resistance rin: approx. 150 saturation region approx. 650 lx rising voltage load line vcc=3 v, r l =1 k load line vcc=5 v, r l =1 k kpicb0160ea [figure 2] photocurrent vs. reverse voltage figure 2 shows the photocurrent vs. reverse voltage characteristics (light source: led) for the measurement circuit example in figure 1. the output curves are shown for illuminance levels. the output curves rise from a reverse voltage (rising voltage) of approximately 0.7 v (10%). to protect the photo ic diode from excessive current, a 150 (20%) protection resistor is inserted in the circuit. reverse voltage v r when the photo ic diode is saturated is the sum of vbe(on) and the voltage drop across the protection resistor rin [equation (1 )]. v r = vbe(on) + i l rin ............ (1) the photodiode?s reverse voltage (v r ) is expressed by equation (2) according to the voltage drop across the external resistor. this is indicated as load lines in figure 2. v r = vcc - i l r l ............ (2) in figure 2, the intersections between the output curves and the load lines are the saturation points. from these points, the m aximum detectable light level can be speci ed. since the maximum light level is determined by the supply voltage (vcc) and load resistance (r l ), adjust them according to the operating conditions. note: the temperature characteristics of vbe(on) is approximately -2 mv/c, and that of the protection resistor is approximatel y 0.1%/c.
cat. no. kpic1091e07 aug. 2015 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of august, 2015. 6 photo ic diode s11153-01mt related information ? disclaimer ? surface mount type products precautions www.hamamatsu.com/sp/ssd/doc_en.html measured example of temperature profile with our hot-air reflow oven for product testing kpicb0173ea 200 c 190 c preheat 80 to 110 s soldering 70 s max. 250 c max. temperature 300 c 170 c time ? this product supports lead-free soldering. after unpacking, store it in an environment at a temperature of 30 c or less and a humidity of 60% or less, and perform soldering within 72 hours. ? the effect that the product receives during re ow soldering varies depending on the circuit board and re ow oven that are used. before actual re ow soldering, check for any problems by testing out the re ow soldering methods in advance.
|
